HgBr_(1.6)I_(0.4) is a new compound semiconductor, candidate for nuclear radiation detector applications, corresponding to x chemical bounds 0.8 of the (HgBr_2)_x-(HgI_2)_(1-x) system. Single crystals of HgBr_(1.6)I_(0.4), grown by the Bridgman-Stockbarger method, were characterized optically using transmission measurements in the fundamental energy gap region, and electrically by DC conductivity measurements at different temperatures and mobility measurements.
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