Criteria for the growth of III-nitrides for blue-green emitting devices

摘要

We present results of state-of-the-art MOVPE systems and processes for the growth of group III nitrides. After an introduction into the technology of present MOVPE mass production reactors, we describe in detail results of GaN and GaInN films grown with MOVPE. Both undoped and doped material will be discussed. Results of characterization with PL, X-ray diffraction, hall and resistivity measurements will be shown. UNiformity measurements show the excellent uniformity of the films (e.g. GaInN with a wavelength uniformity < 1 nm is shown for the first time)