Development of a lead-zirconium-titanate (PZT) actuator array using a CMOS-compatible solution process

摘要

Piezoelectric actuator is a key component in every modern high tech field from semiconductor test to super-resolution microscopy, bio-nanotechnology and astronomy/aerospace. Among piezoelectric materials, lead-zirconium-titanate (PZT) appears as the most promising ones due to its excellent properties. For fabrication of high-density piezoelectric nanodevices and their integration with silicon-based CMOS circuits, low-temperature (≤ 450 °C) processing of piezoelectric films is a must. Previously, we have reported a feasible approach for fabricating high-quality solgel-derived PZT films at a temperature below 450 °C using a novel UV/ozone-assisted annealing method. Operation of a diaphragm-type piezoactuator was also demonstrated using the developed low-temperature PZT films . However, the fabricated device had a low density, and factors that influence on actuator’s performance such as diaphragm structure and thickness of PZT film have not been investigated. In this work, we report on fabrication and optimization of a high-density actuator array, which is designed for possible integration with an active-matrix thin-film transistor for electrical control.