Determination of subband energy levels in double quantum well AlGaAs lasers byphotoreflectance and self-excited electron Raman scattering at 300K

摘要

Subband energy levels of AlGaAs double quantum well layer structure with a separate confinement scheme are determined by PR at room temperature. Also subband energy levels are compared with those determined by the self-excited electron Raman scattering of lasers fabricated from the same quantum well structure but different waveguide thickness outside the quantum wells. Subband energy levels of electrons, heavy holes, and light holes, are in a good agreement for both measurements.