The Effects of CuO Doping, Calcining Temperature, and Sintering Temperature on the Microstructure and the Electric Property of the Lead-Free Piezoelectric Ceramic of Bi0.5Nao.5Ti03

摘要

This study investigates the effects of copper oxide (CuO) addition, calcining temperature, and sintering temperature on the microstructure and the electric property of the lead-free piezoelectric ceramic of bismuth sodium titanate (Bi0.5Na0.5TiO3), BNT, which was prepared using the mixed oxide method. In this study, the calcining temperature ranged from 700 to 1000℃, the sintering temperatures ranged from 950 to 1050 ℃, and the weight percentages of CuO doping included 2, 4, 6, and 8 wt%. A scanning electron microscope (SEM) and an X-ray difiractometer (XRD) were used to determine the micrographs and the X-ray diffraction patterns of a BNT disk, respectively. Further, the electric properties of a BNT disk were obtained using a precision impedance analyzer. The largest relative density of the BNT disk obtained in this study is 96.7% at the calcining temperature of 700 ℃, the sintering temperature of 950 ℃, and 4wt% of CuO addition. The corresponding dielectric constant and loss tangent are 494 and 0.181%, respectively. This study shows that adding CuO to the BNT not only improves the relative density and the dielectric constant of the BNT disk, but it also lowers the sintering temperature.