首页> 外文会议>Proceedings of the 27th International Conference on Electrical Contacts >Micro-contact Resistance of Au-Au on Engineered Contact Surfaces using Gray-scale Lithography
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Micro-contact Resistance of Au-Au on Engineered Contact Surfaces using Gray-scale Lithography

机译:灰度光刻技术在工程接触表面上金与金的微接触电阻

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This paper presents a comparison of Au-Au microcontacts fabricated with planar and engineered lower contacts. It compares the effects of engineered lower contact surfaces to planar lower contact surface on micro-contact resistance performance. Gray-scale lithography was used to construct 3D structures into photoresist. The structures were then etched into a silicon wafer using a Trion reactive ion etch (RIE) system. The engineered lower contact surfaces consisted of hemispheres, 2D pyramids and 3D pyramid patterns. A microelectromechanical systems (MEMS) micro-contact support structure, consisting of a fixed-fixed beam, was micromachined as the upper contact. The micro-contact support structure was used as the platform for a hemisphere shaped upper contact. The micro-contacts were actuated using an external, calibrated load. To observe micro-contact performance, the contact resistance and force required to close the contact, were monitored throughout testing. Next the micro-contacts underwent contact resistance testing to evaluate how the engineered lower contacts affected performance. Results show that the 3D pyramid design closely matched the hemisphere/planar contact data with a contact resistance of 0.7 Omega after 10(exp 7) cycles. The 2D pyramid pattern resulted in a higher contact resistance during initial testing and then ended with a contact resistance of 1.083 Omega after 10(exp 7) cycles.
机译:本文介绍了用平面和工程下部触点制造的Au-Au微触点的比较。它比较了设计的下部接触表面与平面下部接触表面对微接触电阻性能的影响。灰度光刻用于将3D结构构造到光刻胶中。然后使用Trion反应离子蚀刻(RIE)系统将结构蚀刻到硅晶片中。设计的下部接触表面由半球,2D金字塔和3D金字塔图案组成。微机电系统(MEMS)的微接触支撑结构,由固定固定的梁组成,被微加工为上部接触。微触点支撑结构用作半球形上触点的平台。使用外部校准负载来驱动微触点。为了观察微接触性能,在整个测试过程中都要监测接触电阻和闭合接触所需的力。接下来,对微触点进行接触电阻测试,以评估设计的下部触点如何影响性能。结果表明,在10(exp 7)个循环后,3D金字塔设计与半球/平面接触数据紧密匹配,接触电阻为0.7Ω。 2D金字塔图案在初始测试期间导致较高的接触电阻,然后在10(exp 7)次循环后以1.083Ω的接触电阻结束。

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