GaN-Based Devices for Electronic Applications

摘要

We review recent progress in GaN-based electronic devices, which is linked to the improvements in materials quality, to the use of new designs(such as Doped Channel AlGaN/GaN Heterostructure Field Effect Transistors), and to the epitaxial growht on substrates that differ from traditional sapphire substrates, such as silicon, spinel, and silcon carbide.