A Stress Technique Suitable for the In-line Reliability Monitoring of The Hot Carrier Endurance Of Sub-0.5#mu#m MOSFETs

摘要

The purpose of this paper is to present a stress mode which allows the hot carrier endurance of sub-half micron MOSFETs to be evaluated within 100s of DC stress. Contrary to the classical approach which requires substantially longer test times (i.e.about 10~5s of DC stress at the maximum substrate current), the proposed technique is suitable for in-line reliability monitoring applications.