Design of IC's heavily relies on circuit simulation and circit simulation needs compact device models. This paper is about the state-of-the-art in compact modelling; it is limited to models for vertical bipolar transistors. The four most widely known models(SGP, MEXTRAM, HICUM, VBIC'95) are compared to each other with respect to the modelled physical effects and to their performance. Emphasis will be on the applicability in RF circuit design, so Si-Ge base transistors, non-linear distrotion, geometrical scaling, statistical modelling and thermal modelling for self-heating will get explicit attention.
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