InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier

摘要

We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a W-band amplifier. To eliminate current collapse, a unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted. The developed discrete GaN-HEMT achieved a Pout density of 3.0 W/mm at 96 GHz, and we fabricated W-band amplifier MMIC using the air-bridge wiring technology. The Pout density of the MMIC reached 3.6 W/mm at 86 GHz. We proved the potential of the developed InAlGaN/GaN-HEMT experimentally using our unique device technology. With the aim of future applications, we developed a novel wiring-inter-layer technology. It consists of a cavity structure and a moisture-resistant dielectric film technology. We demonstrated excellent high-frequency performances and low current collapse originating in humidity-degradation using AlGaN/GaN-HEMT. This is also a valuable technology for InAlGaN/GaN-HEMT.