Simulation framework for barrier lowering in Schottky barrier MOSFETs

摘要

In this paper we present a simulation framework to account for the Schottky barrier lowering models in SB-MOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy to extract the different current components and thus predict accurately the on- and off-current regions are adressed.