Analysis of simulation models for integrated semiconductor devices simulation with improved endurance to external conditions

摘要

Integrated semiconductor devices with improved endurance to external conditions simulation methods using TCAD Synopsys were analyzed. Such effects as self-heating in lateral high voltage SOI-MOSFET, breakdown in low-voltage SOI n-MOSFET, charge trapping in oxides during SOI MOFSET irradiation and bipolar current gain calculation features were considered. Model features with the greatest impact on device simulation results were identified.