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Technology flavor selection and adaptive techniques for timing-constrained 45nm subthreshold circuits

机译:时序受限的45nm亚阈值电路的技术风味选择和自适应技术

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We investigate techniques to design 45nm minimum-energy subthreshold CMOS circuits under timing constraints, considering the practical case of an 8-bit multiplier. We first show that technology flavor and Vt selections shift minimum-energy point to different operating frequencies, thereby enabling minimum energy in either low- or mid-performance applications. However, we demonstrate that independent dual-Vt assignment to save leakage in non-critical paths is not feasible. We then show that reverse adaptive body biasing (ABB) is potentially more efficient to compensate for global process/temperature variations than adaptive voltage scaling and forward ABB. Nevertheless, its practical efficiency is limited by the affordable VBB range and the value of the body-effect coefficient.
机译:考虑到8位乘法器的实际情况,我们研究了在时序约束下设计45nm最小能量亚阈值CMOS电路的技术。我们首先表明,技术风味和Vt选择将最小能量点转移到不同的工作频率,从而在低性能或中性能应用中实现了最小能量。但是,我们证明了独立的双重Vt分配来节省非关键路径中的泄漏是不可行的。然后,我们表明,与自适应电压缩放和正向ABB相比,反向自适应主体偏置(ABB)可能更有效地补偿全局过程/温度变化。然而,其实用效率受到负担得起的VBB范围和身体效应系数值的限制。

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