Smart pile-up consideration for evaluation of high count rate EDS spectra

摘要

This work describes a new pile-up consideration for the very high count rate spectra which are possible to acquire with silicon drift detector (SDD) technology. Pile-up effects are the major and still remaining challenge with the use of SDD for EDS in scanning electron microscopes (SEM) with ultra thin windows for soft X-ray detection. The ability to increase the count rates up to a factor of 100 compared with conventional Si(Li) detectors, comes with the problem that the pile-up recognition (pile-up rejection) in pulse processors is not able to improve by the same order of magnitude, just only with a factor of about 3. Therefore, it is common that spectra will show significant pile-up effects if count rates of more than 10000 counts per second (10 kcps) are used. These false counts affect both automatic qualitative analysis and quantitative evaluation of the spectra. The new idea is to use additional inputs for pile-up calculation to shift the applicability towards very high count rates of up to 200 kcps and more, which can be easily acquired with the SDD. The additional input is the 'known' (estimated) background distribution, calculated iteratively during all automated qualitative or quantitative evaluations. This additional knowledge gives the opportunity for self adjustment of the pile-up calculation parameters and avoids over-corrections which challenge the evaluation as well as the pile-up artefacts themselves. With the proposed method the pile-up correction is no longer a 'correction' but an integral part of all spectra evaluation steps. Examples for the application are given with evaluation of very high count rate spectra.