Department of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy,Techonyou Srl, Via La Guardia 9/A, 09034 Villasor, Italy,Institute of Nanoscience, S3 Centre, Consorzio Nazionale della Ricerca, Via Campi 213A, 41125, Modena, Italy;
Department of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy;
Department of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy;
Department of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy,Institute of Nanoscience, S3 Centre, Consorzio Nazionale della Ricerca, Via Campi 213A, 41125, Modena, Italy;
organic memory; flexibility; resistive switching; low voltage OFETs;
机译:使用氧化物半导体和铁电聚合物聚偏二氟乙烯-三氟乙烯的柔性非易失性存储器件
机译:基于有机双组分共混物的具有256种以上不同能级的柔性非易失性光学存储器薄膜晶体管器件
机译:基于并五苯半导体和有机隧穿绝缘层的非易失性纳米浮栅存储器件
机译:基于有机半导体的柔性非易失性存储器件
机译:聚合物基金属氧化物半导体和非易失性存储设备的制造和表征。
机译:半导体:基于并五苯/ P13 /并五苯作为电荷传输层和陷阱层的有机半导体异质结构的高性能非易失性有机场效应晶体管存储器(Adv。Sci。8/2017)
机译:基于聚合物的金属氧化物半导体和非易失性存储器件的制造与表征
机译:基于磁性半导体纳米结构的新型非易失性存储器件用于太比特集成