A simple method to design the single-mask multi-zone junction termination extension for high-voltage IGBT

摘要

A simple method to design the single-mask multi-zone junction termination extension (MZJTE) (SM-MZJTE) for high-voltage insulated-gate bipolar transistor (IGBT) is presented and experimentally demonstrated. By assuming that the p-type SM-MZJTE region is completely depleted and the equipotential lines are circular arcs for simplicity, an analytical model of the selective function is derived from the charge balance and the geometrical relations. As the blocking capability is sensitive to the implantation dose, the Boron segregation at Si-SiO2 interface has also been taken into consideration in this model. According to the analytical model, high-voltage IGBTs and test devices with edge termination of SM-MZJTE are fabricated. IGBTs with edge termination implantation dose of 3×10¹² cm⁻² show highest average breakdown voltage of 3.79 kV (about 92% of the parallel plane breakdown voltage).