Using active IF load-pull to investigate electrical base-band induced memory effects in high-power LDMOS transistors

机译：使用有源IF负载牵引来研究大功率LDMOS晶体管中电基带引起的存储效应

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Memory effects are generally attributable to thermal, electrical, packaging and/ or surface effects. This behaviour in turn impacts overall linearity and importantly the suitability of a power amplifier (PA) to linearisation through pre-distortion. It is

机译：记忆效应通常可归因于热效应，电效应，封装效应和/或表面效应。这种行为反过来会影响整体线性度，并且重要的是会影响功率放大器（PA）通过预失真线性化的适用性。它是

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《Power Quality and Supply Reliability Conference, 2008》|2007年|P.1-4|共4页
会议地点 Bangkok,Thailand
作者
Alghanim; A.; Lees; J.; Williams; T.; Benedikt; J.; Tasker; P.;
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intermediate-frequency amplifiers; modulation; power MOSFET; power amplifiers; active intermediate-frequency load-pull; current waveforms; electrical baseband induced memory effects; electrical memory; frequency 2.1 GHz; high-power LDMOS transistors; high-power me;

机译：中频放大器；调制;功率MOSFET;功率放大器；有源中频负载牵引；电流波形电基带引起的记忆效应；电存储器；频率2.1 GHz;大功率LDMOS晶体管；大功率的我;

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1. Sensitivity of electrical baseband memory effects to higher-order IF components for high-power LDMOS power amplifiers [J] . A. Alghanim, J. Lees, T. Williams, Electronicsletters . 2008,第4期

机译：电基带存储效应对高功率LDMOS功率放大器的高阶IF分量的敏感性
2. Sensitivity of electrical baseband memory effects to higher-order IF components for high-power LDMOS power amplifiers [J] . A. Alghanim, J. Lees, T. Williams, Electronics Letters . 2008,第5期

机译：电基带存储效应对高功率LDMOS功率放大器的高阶IF分量的敏感性
3. Super Junction LDMOS Transistors - Implementing super junction LDMOS transistors to overcome substrate depletion effects [J] . Il-Yong C. Park, C. Andre T. Salama IEEE Circuits & Devices . 2006,第6期

机译：超结LDMOS晶体管-实现超结LDMOS晶体管以克服衬底耗尽效应
4. Using active IF load-pull to investigate electrical base-band induced memory effects in high-power LDMOS transistors [C] . Alghanim A., Lees J., Williams T., Asia Pacific Microwave Conference . 2007

机译：使用Active IF Lauge-Rull以研究高功率LDMOS晶体管中的电源基带感应存储器效果
5. Investigation of electrically active defects in gallium nitride, aluminum gallium nitride , and aluminum gallium nitride/gallium nitride high electron mobility transistors [D] . Arehart, Aaron R. 2009

机译：研究氮化镓，氮化铝镓和氮化铝镓/氮化镓高电子迁移率晶体管中的电活性缺陷
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7. A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors [O] . Everett, JP, Kearney, MJ, Rueda, H, 2011

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8. Large-Signal Characterization of Millimeter-Wave Transistors Using an Active Load-Pull Measurement System [R] . Actis, R., McMorran, R. A., Murphy, R. A., 1989

机译：利用有源负载牵引测量系统对毫米波晶体管进行大信号表征

Using active IF load-pull to investigate electrical base-band induced memory effects in high-power LDMOS transistors

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