A method for calculating the junction temperature based on temperature measurement on the mold compound

摘要

The paper will present the general dependencies of the temperature difference between junction and mold compound (MC) of discrete IGBT and diodes. These differences are given in respect to the reference of the backside leadframe on the relevant parameters of discrete power components. The parameters are the package type (TO220, TO220 Fullpack and TO247) and the chip size. As a target, a complete set of formulae will be given, which lead to the calculation of junction temperature. With the results of this paper, design engineers will be empowered to calculate the real junction temperature of his device with a comparable small tolerance and lowest effort.