Large area IGCTs with improved SOA

摘要

This paper presents three concepts for Safe Operating Area (SOA) improvements for large area IGCTs (Integrated Gate-Commutated Thyristors) by: Optimized gate-circuit, improvement of the local SOA by optimized profiles, irradiation and compensation of lateral effects by means of irradiation. Local SOA optimization (on small devices) in connection with improved gate-circuit led to record-breaking SOA of 1 MW/cm~2 switching power density. The combination of all three approaches led to an SOA improvement of more the 30% for large area devices.