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Changing The Guard - the Next Step in Power MOSFET Packaging for DC-to-DC Applications

机译:改变警惕-DC-DC应用的功率MOSFET封装的下一步

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As the power density requirements of dc-to-dc converters continue to increase, board real estate is becoming more valuable than ever, increasing the demand for power MOSFET packages with a smaller footprint and improved thermal and electrical efficiency. Advances in silicon technology have helped to reduce on-resistance (r_Ds(on)) for a given die size to almost negligible levels. Now the challenge is to optimize die size and device packaging to maximize converter performance. New small package options help to reduce conduction losses and switching losses of the primary side switch in dc-to-dc converters while allowing higher power density levels.
机译:随着DC-DC转换器对功率密度要求的不断提高,电路板空间变得比以往任何时候都更有价值,从而越来越需要更小尺寸的功率MOSFET封装,并提高了热效率和电效率。硅技术的进步有助于将给定芯片尺寸的导通电阻(r_Ds(on))降低到几乎可以忽略的水平。现在的挑战是优化管芯尺寸和器件封装,以最大化转换器性能。新的小封装选项有助于减少DC-DC转换器中初级侧开关的传导损耗和开关损耗,同时允许更高的功率密度水平。

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