Static Induction Diodes

摘要

Static induction diodes with sepaated anode electrodes were fabricated to investigate the current conduction mechanism and the static induction effect. Under reverse bias condition, a potential barrier below the metal-semiconductor contacts is produced by means fo depletion regions fro mp-n junctions. THis static induction effect prevents the electric field from increasing at the MS cintacts. In the forward bias situation, the SI-Diode can operate at high current levels with less injected minority carriers than conventional pin diodes. This is one of remarkable features of the SI-Diode which provides superior switching performance without sacrificin the forward voltage drop.