Static induction Power Diode with a P-Type CHannel

摘要

Operational principle of a static induction type diode is made clear by device simulations. The forward operation of this diode is similar to that of the asymmetrical P-i-N diode. This operation fundamentally allows and operation with a tradeoff relation-ship between forward voltage drop and reverse recovery time superior to the tradeoff of the conventional P-i-N diode. To improve a breakdown volltage of a static induction type diode successfully, a diode structure having a P-type channel ar proposed. The simulation predicts that, for the P-type channel diode, when channel dosage is optimized, an excellent tradeoff between recovery time, foreard drop and breakdown voltage can be achieved. The estimation ofthe I-V characteristics fo the fabricated P-type diodes proves the importance of the opimization for the channel dosage.