Gas Sensing Property of Porous SnO_2 Layer Synthesized through Anodic Oxidation

摘要

SnO_2 porous structure was fabricated by anodic oxidation. The Sn coated SiCVSi wafer was used as an anode and it was anodized in 0.3 M oxalic acid aqueous solution using DC power supply. The phase of formed oxide was rutile and the morphology showed a porous structure. The porous SnO_2 with nano-channel was obtained at 6V and the pore diameter was approximately 20 nm. Arnpost annealing was performed at 500 ℃ for 3 h to enhance the crystallinity. To evaluate the gas sensing properties, a comb like Ft pattern was deposited on the anodized and annealed specimen and its gas sensing properties were measured as a function of gas concentration and working temperature