ROLE OF Ag~+ ION CONCENTRATION ON METAL-ASSISTED CHEMICAL ETCHING OF SILICON

摘要

Metal-assisted silicon etching in HF/H_2O_2/H_2O solution with silver ions as catalyst was investigated. It is found that the geometric parameters of silicon nanostructured layers are determined by the silver-catalyst concentration. Spontaneous stop of the process during etching at low Ag~+ ion concentration is explained by insoluble Ag_2SiO_3 formation.