Electrical Engineering Department, 1 Grand Avenue,California Polytechnic State University, San Luis Obispo, CA, USA, 93407-9000;
Electrical Engineering Department, 1 Grand Avenue,California Polytechnic State University, San Luis Obispo, CA, USA, 93407-9000,School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing, China, 100871;
Electrical Engineering Department, 1 Grand Avenue,California Polytechnic State University, San Luis Obispo, CA, USA, 93407-9000;
School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing, China, 100871;
School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing, China, 100871;
School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing, China, 100871;
Gallium Nitride; Light-Emitting-Diode; grating;
机译:具有误差光栅模型的GaN LED顶部和底部光子光栅的研究
机译:优化顶部聚合物光栅以提高GaN LED的透光率
机译:GaN基倒装芯片LED和顶部发射LED的数值模拟与实验研究
机译:纳米级仿真这一顶级甘LED光栅
机译:基于GaN的模块化拓扑实现的高密度功率转换电子产品。
机译:使用近场扫描光学显微镜对InGaN / GaN QWs LED中的V缺陷进行纳米级表征
机译:顶部传输光栅GAN LED模拟光提取改进