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Optical studies of charged excitons in Ⅱ-Ⅵ semiconductor quantum wells

机译:Ⅱ-Ⅵ族半导体量子阱中带电激子的光学研究

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摘要

A brief review is given of optical experiments related to the creation and recombination of charged excitons. The fundamental parameters of these states are discussed. This includes their energies, optical transition probabilities, and characteristic times of their formation, thermalisation, and decay. A model of free three-particle charged exciton is shown to describe correctly the results of many experiments. The applicability range of the model is limited by many body effects at higher carrier concentrations and by localisation, typically due to disorder.
机译:简要回顾了与带电激子的产生和复合有关的光学实验。讨论了这些状态的基本参数。这包括它们的能量,光学跃迁几率以及它们形成,热化和衰减的特征时间。显示了一个自由的三粒子带电激子模型,可以正确描述许多实验的结果。该模型的适用范围受到较高载流子浓度下的许多身体效应和局部位置(通常是由于疾病)的限制。

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