THEORETICAL SIMULATION OF ELECTRIC PROPERTIES OF CNT-Me AND GNR-Me INTERCONNECTS

摘要

In order to overcome disadvantages of nowadays microtechnology, the miniaturization of electronic devices, a high integration level and the increase of the operation frequencies and power density are required, including the use of adequate materials and innovative chip interconnects. Due to their unique physical properties, especially due to a ballistic mechanism of conductivity, carbon nanotubes (CNTs) attract permanently growing technological interest, for example, as promising candidates for nanointerconnects in a high-speed electronics. New possibilities for modern nanolectronics are opened with a novel 'marginal' forms of graphene - nanoflakes (GNFs) and nanoribbons (GNRs), which analogously to CNTs demonstrate a lossless ballistic mechanism of conductivity. Graphene nanointerconnects are also important for nanotechnology. Full integration of graphene into conventional device circuitry would require a reproducible large scale graphene synthesis that is compatible with conventional thin film technology.