CIGS-BASED THIN FILM SOLAR CELLS WITH GRADED BAND GAP AND NANOSTRUCTURED CONTACTS

摘要

ZnO-CdS/p-Cu(In,Ga)Se_2 thin film solar cells with graded bandgap absorber layer have been modelled. The nanostructuring effects in solar cells formed on a substrate using porous anodic alumina was considered taking into account processes at grain boundaries and nanoordered back contact. Charge carriers accumulation at the interfaces leads to local effective bandgap narrowings at the interfaces reducing the conversion efficiency.