Minority-Carrier Lifetimes, Defects, and Solar Cells of InGaAsN, Lattice-Matched to GaAs

摘要

Electronic properties, relevant to solar cell applications, are described for InGaAsN; lattice-matched to GaAs. This novel semiconductor displays optical and transport properties which are highly non-ideal and sensitive to growth, doping, and processing conditions. Hole diffusion lengths of 0.6-0.8 #mu#m can be achieved in annealed, n-type InGaAsN, and internal quantum efficiencies > 70percent are obtained for 1.0 eV bandgap cells. Wider bandgap, 1.16 eV cells display high internal quantum efficiencies with significantly larger open-circuit voltages than the 1.0 eV cells.