Photovoltaic structures based on Cu(In, Ga)Se2 thin films prepared by thermal co-evaporation

摘要

In this work, we are reporting the results of the deposition and characterization of Cu(InGa)Se2 thin films prepared by thermal co-evaporation and the results of the photovoltaic devices made with these Cu(In, Ga)Se2 thin films, using as the window material partner a CdS layer prepared from two different chemical bath solution recipes. Results have shown that high quality polycrystalline films have been obtained, which have very uniform morphology with grain sizes of tenths of a micrometer and a chemical composition very close to the stoichiometry of the Cu(In, Ga)Se2. After processing the Cu(In, Ga)Se2 thin film samples into solar cells, the highest conversion efficiency achieved was ~ 11 %.