Performance improvement of CIGS solar cells with CBD-ZnS buffer layers by light soaking and rapid thermal annealing

摘要

Cadmium-free Cu(In, Ga)Se2 (CIGS) solar cells have been fabricated with ZnS buffer layers by using a chemical bath deposition (CBD). Significant improvement of current-voltage (J-V) performance was observed in the device after light soaking and rapid thermal annealing (RTA). The improvement by light soaking is a temporary phenomenon. On the contrary, RTA treatment is permanent improvement, which increases VOC and FF, moreover, accelerates the increasing rate of efficiency caused by light soaking, which results in a shorten time to achieve high performance.