【24h】

Ab inito study of Ag-related defects in ZnO

机译:ZnO中与银有关的缺陷的从头算研究

获取原文
获取原文并翻译 | 示例

摘要

Using first-principles calculations, we investigated the structure and electronic properties of Ag-related defects in ZnO. The calculation results indicate that Ag_(Zn) behaves as acceptor. Simultaneously, by comparing the formation energy and electronic structure of Ag-related defects in ZnO, O_i-Ag_(Zn) behaves as acceptor in Ag-doped ZnO and it is better to gain p-type ZnO. However, H_i-Ag_(Zn) complex has the lowest formation energy. Thus, the formation of the other point defects is greatly suppressed by the formation of H, in Ag-doped ZnO. Moreover, the H atoms can be easily dissociated from hydrogen-passivated complexes by post-annealing at moderate temperatures, thus, codoping Ag with H may be a good method to achieve p-type in Ag-doped ZnO.
机译:使用第一性原理计算,我们研究了ZnO中与银有关的缺陷的结构和电子性能。计算结果表明Ag_(Zn)表现为受体。同时,通过比较ZnO中Ag相关缺陷的形成能和电子结构,O_i-Ag_(Zn)在掺杂Ag的ZnO中表现为受体,获得p型ZnO效果更好。然而,H_i-Ag_(Zn)配合物具有最低的形成能。因此,在Ag掺杂的ZnO中,通过H的形成极大地抑制了其他点缺陷的形成。此外,通过在中等温度下进行后退火,H原子很容易从氢钝化配合物中解离,因此,将Ag与H共掺杂可能是在掺Ag的ZnO中实现p型的好方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号