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Ab inito study of Ag-related defects in ZnO

机译:AB初始研究ZnO相关缺陷的研究

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Using first-principles calculations, we investigated the structure and electronic properties of Ag-related defects in ZnO. The calculation results indicate that Ag_(zn) behaves as acceptor. Simultaneously, by comparing the formation energy and electronic structure of Ag-related defects in ZnO, O_i-Agz_n behaves as acceptor in Ag-doped ZnO and it is better to gain p-type ZnO. However, H_i-Agz_n complex has the lowest formation energy. Thus, the formation of the other point defects is greatly suppressed by the formation of H_i in Ag-doped ZnO. Moreover, the H atoms can be easily dissociated from hydrogen-passivated complexes by post-annealing at moderate temperatures, thus, codoping Ag with H may be a good method to achieve p-type in Ag-doped ZnO.
机译:使用初原则计算,我们研究了ZnO中Ag相关缺陷的结构和电子性质。计算结果表明AG_(Zn)的行为是受体。同时,通过比较ZnO中的Ag相关缺陷的形成能量和电子结构,O_I-AGZ_N在Ag掺杂的ZnO中表现为受体,并且最好获得p型ZnO。但是,H_I-AGZ_N复合物具有最低的形成能量。因此,通过在Ag掺杂的ZnO中形成H_I,大大抑制了其他点缺陷的形成。此外,H原子可以通过在中等温度下退火的后退火容易地解离氢钝化的配合物,因此,具有H的编码Ag可以是在Ag掺杂的ZnO中实现p型的好方法。

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