High quality A1N films grown by pulsed atomic-layer epitaxy

摘要

In this paper, we report growth of A1N epilayers by pulsed atomic-layer epitaxy (PALE) method, by which the group III element sources and NH_3 were alternatively transported into the reactor. We have systematically investigated the effects of growth conditions of PALE on the crystal quality of A1N epilayers. By optimizing the PALE growth conditions, the root mean square (rms) of A1N layers was 1.319 nm and the full width at half-maximum (FWHM) was 0.18 arcmin, room-temperature band edge absorbing peak at 198 nm was easily achieved, indicating the small mosaicity and low dislocation density of the films.