Characteristics of photosensors based on solid solutions of AIIBVI compounds

摘要

Abstract: In the work there are submitted the results of the research of photosensors on a base of solid solutions of A$+II$/B$+VI$/ compounds for measurement and control of intensity of low-level light in narrow areas of spectrum. The basic principles of technological process of manufacturing of injection photo diodes are described. The results of measurements of voltage-current characteristics and spectral characteristics of photo diodes, received in laboratory technological process with the various contents of cadmy and zinc in ZnCd$-1$MIN@x$/S$-x$/ solid solutions, and also sulfur and selen in CdS$-1$MIN@x$/Se$-x$/ solid solutions are submitted. The investigation results have shown, that photosensors work at low positive bias voltage, do not require cooling, have high sensitivity in a maximum and narrow selectivity. In CdS$-1$MIN@x$/Se$-x$/- photosensors the photosensitive protecting coverage of transparent films on the base of As$-2$/S$-3$/ compounds is applied. The opportunity of creation of a wide discrete range of photo diodes with the sensitivity in range from near ultraviolet up to near infrared area of spectrum is shown.!6