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Optimal spectral acquisition band for temperature profiling in human skin using pulsed photothermal radiometry

机译:脉冲光热辐射法在人皮肤中进行温度分布分析的最佳光谱采集带

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摘要

We studied pulsed photothermal radiometric temperature profiling in human skin in numerical simulations. We considered two detectors with different spectral responses (InSb, 3.0 - 5.3 μm; HgCdTe, 5.0 - 12.0 μm). By taking into account sensitivity of available radiation detectors, realistic noise, blackbody emission characteristics and spectral variation of human skin IR absorption coefficient for a certain acquisition band, we computed realistic PPTR signals for analytical temperature profiles (Hyper-Gaussian, 100 - 500 μm deep). For each spectral band we determined the optimal effective monochromatic absorption coefficient to be used in reconstructions. We reconstructed temperature profiles from the simulated signals using a custom code, based on the conjugate-gradient algorithm and including automatic adaptive regularization. Quantitative analysis of the reconstructed temperature profiles enables determination of optimal spectral acquisition band for each IR detector. In case of InSb detector, narrow acquisition bands yield lower reconstruction errors for shallow objects, but wide acquisition bands are preferred for deeper objects. The 4.1 - 5.6 μm spectral band offers a good compromise for objects placed at variable depths. For the HgCdTe detector the results indicate that optimal acquisition spectral band is 6.4 - 12.0 μm. The results also suggest that HgCdTe detector used at 6.4 - 12.0 μm performs better than InSb detector used at 4.1 -5.6 μm.
机译:我们通过数值模拟研究了人皮肤中的脉冲光热辐射温度分布图。我们考虑了两个具有不同光谱响应的检测器(InSb,3.0-5.3μm; HgCdTe,5.0-12.0μm)。通过考虑可用辐射探测器的灵敏度,真实噪声,黑体发射特性以及特定采集波段的人体皮肤红外吸收系数的光谱变化,我们计算出了真实的PPTR信号,用于分析温度曲线(超高斯,深100-500μm )。对于每个光谱带,我们确定了用于重建的最佳有效单色吸收系数。我们基于共轭梯度算法并使用自动自适应正则化,使用自定义代码从模拟信号中重构了温度曲线。重构温度曲线的定量分析可以确定每个红外探测器的最佳光谱采集波段。对于InSb检测器,对于较浅的物体,较窄的采集频带会产生较低的重建误差,但对于较深的物体,较宽的采集频带是首选。 4.1-5.6μm光谱带为放置在可变深度的物体提供了很好的折衷方案。对于HgCdTe检测器,结果表明最佳采集光谱带为6.4-12.0μm。结果还表明,在6.4-12.0μm处使用的HgCdTe检测器的性能优于在4.1 -5.6μm处使用的InSb检测器。

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