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Electric Field Biased Faraday Effect in Cr-doped BiFeO_3 Thin Film

机译:Cr掺杂BiFeO_3薄膜的电场偏置法拉第效应

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Multiferroics, materials which possess multiple ferroic orders, have seen a revival of interest in recent years as the need for multifunctional and multitunable devices has increased. These particular materials are of interest due to the potential to control and tune devices by both electric and magnetic fields. Examining how an external electric field alters the magneto-optic response of the well-known multiferroic, BiFeO_3 (BFO), could provide useful insight into how these multiferroics would function in optical devices. The Faraday rotation of a 10% Cr-doped BFO (111) thin film on an MgO substrate was measured for three conditions using an ac magnetic field technique: no biasing electric field, a positive 2 kV/m electric field, and a negative 2 kV/m electric field. The Verdet constant for these three conditions at an optical wavelength of 632.8 nm was 20.48 ± 1.96 °/kOe-cm, 21.25 ± 3.33 °/kOe-cm, and 2.01 ± 0.5 °/kOe-cm respectively. These results demonstrate the possibility to manipulate the magneto-optic response of the thin film with an external dc electric field. Future work to both overcome the deficiencies exhibited by BFO and investigate how precisely the magneto-optic response can be controlled by an external field is presented and discussed.
机译:近年来,随着对多功能和可调谐设备的需求不断增加,具有多种铁素体次序的材料-多铁素体已经引起了人们的兴趣。由于通过电场和磁场来控制和调谐设备的潜力,这些特殊的材料受到关注。研究外部电场如何改变著名的多铁磁BiFeO_3(BFO)的磁光响应,可以提供有用的见解,以了解这些多铁磁将如何在光学设备中发挥作用。使用交流磁场技术在三种条件下测量了MgO衬底上10%Cr掺杂的BFO(111)薄膜的法拉第旋转:无偏置电场,无正电场2 kV / m和无负电场2 kV / m电场。这三种条件在632.8 nm的光波长下的Verdet常数分别为20.48±1.96°/ kOe-cm,21.25±3.33°/ kOe-cm和2.01±0.5°/ kOe-cm。这些结果证明了在外部直流电场的作用下控制薄膜的磁光响应的可能性。提出并讨论了克服BFO所表现出的缺陷以及研究如何精确地由外部磁场控制磁光响应的未来工作。

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