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首页> 外文期刊>Japanese journal of applied physics >Ferroelectric and Piezoelectric Properties of Polycrystalline BiFeO_3 Thin Films Prepared by Pulsed Laser Deposition under Magnetic Field
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Ferroelectric and Piezoelectric Properties of Polycrystalline BiFeO_3 Thin Films Prepared by Pulsed Laser Deposition under Magnetic Field

机译:磁场下脉冲激光沉积制备的BiFeO_3多晶薄膜的铁电和压电特性

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摘要

Polycrystalline BiFeO_3 (BFO) thin films have been prepared on Pt/TiO_2/SiO_2/Si substrates by using a pulsed laser deposition (PLD) method under,a magnetic field. The X-ray diffraction (XRD) pattern shows a single-phase perovskite structure with no secondary phases, and (010) and (020) peaks slightly shift to lower angles in comparison with those of a BFO thin film prepared without a magnetic field. A columnar structure and small grain size were observed and the leakage current is slightly high in comparison with that of a BFO thin film prepared without a magnetic field. A polarization versus electric field (P-E) hysteresis loop was obtained at RT and the polarization at zero electric field is 50μC/cm~2. Ferroelectric domain switching corresponding to up and down polarization states was confirmed. An enhanced piezoelectric coefficient (d_(33)) of about 100 pm/V has been obtained at a certain point. Ferroelectric and piezoelectric properties were affected by a columnar microstructure formed by magnetic field application.
机译:在磁场作用下,采用脉冲激光沉积(PLD)方法在Pt / TiO_2 / SiO_2 / Si衬底上制备了多晶BiFeO_3(BFO)薄膜。 X射线衍射(XRD)图显示没有第二相的单相钙钛矿结构,并且与没有磁场制备的BFO薄膜相比,(010)和(020)峰稍微移至较低角度。与没有磁场的BFO薄膜相比,观察到柱状结构和小晶粒,并且漏电流略高。在室温下获得极化-电场(P-E)磁滞回线,零电场下的极化为50μC/ cm〜2。确认了对应于向上和向下极化状态的铁电畴切换。在某一点已获得约100 pm / V的增强压电系数(d_(33))。铁电和压电性能受磁场施加形成的柱状微结构的影响。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue3期|09MD05.1-09MD05.4|共4页
  • 作者单位

    Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan;

    Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2201, Japan;

    Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan;

    Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan;

    Institute for NanoScience Design, Osaka University, Toyonaka, Osaka 560-8531, Japan;

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