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Shot based MRC flow by using full chip MRC tool

机译:通过使用全芯片MRC工具进行基于射击的MRC流

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摘要

As the minimum feature size gets smaller, the use of optical proximity correction (OPC) becomes more aggressive. The time for mask data preparation dramatically increases.The increase in the number of small size patterns in design causes the increase of Mask Rule Check (MRC) error. It brings the need for checking the error between mask fab and Taped-out customers. Therefore, the Turn-Around Time (TAT) is enlarged. MRC offers not only the rule check but also the violated-pattern-correction to satisfy the quality requested by the customers. In this paper, we suggest a new MRC flow by using new MRC tool that carrys out MRC over various input of e-beam data and handles the MRC output data. In case of the violated pattern which approaches Mask Constraint we expand violated pattern size for pattern correction. And the elimination method can be applied to very small pattern. We describe how well preformed differently in mask exposure time and inspection capability.
机译:随着最小特征尺寸变小,光学邻近校正(OPC)的使用变得更加积极。掩码数据准备的时间急剧增加。设计中小尺寸图案数量的增加导致掩码规则检查(MRC)错误的增加。这就需要检查掩膜制造厂和Taped-out客户之间的错误。因此,转弯时间(TAT)增大了。为了满足客户要求的质量,MRC不仅提供规则检查,还提供违规纠正。在本文中,我们建议使用新的MRC工具提出新的MRC流程,该工具可对各种电子束数据输入执行MRC并处理MRC输出数据。如果违反的图案接近“遮罩约束”,我们将扩大违反图案的尺寸以进行图案校正。并且消除方法可以应用于非常小的图案。我们描述了掩模曝光时间和检查能力方面的差异。

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