A Mature 1200V SiC JFET Technology Optimized for Efficient and Reliable Switching

摘要

After 10 years of successful SiC diode production, we consider SiC technology mature enough tornintroduce our first SiC switch. SiC′s unique physical properties give us the opportunity to design a newrnclass of high-voltage switches beside Si super-junction devices and IGBTs. Low static and dynamicrnlosses as well as the integration of a body-diode are key features which will prove revolutionary forrnapplication topologies relying on hard-switching with commutation as well as on resonant switching.rnThe major technology features and their impact will be discussed.