Silicon Carbide Switching Devices: Pros and Cons for MOSFETs, JFETs and BJTs

摘要

The most commonly pursued switches in SiC are compared in terms of device performance, reliability,rnand cost of manufacturing. The DMOSFET structure offers the most features, but it can be more expensivernto manufacture. Normally-On JFETs can be manufactured at a lower cost and provide excellentrncharacteristics, but will have difficulty winning wide acceptance in the power electronics field. Normally-rnoff JFET devices can also be produced at a lower cost, but sensitivity to materials and processingrnrequirements may result in low yields, which can negate the lower fabrication cost, and providernrelatively poor performance compared to other structures. BJTs offer good performance and lower costrnof manufacturing, but device stability is yet to be resolved. Detailed analysis and comparison are presentedrnin this paper.