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Parallel crystal growth for chip placement

机译:平行晶体生长以放置芯片

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Parallel Crystal Growth, a new parallel extension of Simulated Annealing (SA), is presented. Sub-problems - the crystals - are solved in parallel, and iteratively merged into bigger crystals. The essential novelty is that processors spend time in a specific sub-problem, only as long as it is worthwhile, by locally computed merging criteria. Intra crystal search, is not repeated. Only inter-crystal exploration is done after merging. Whole problem terminationis similarly determined. This leads to controlled speedup super-linearity, as demonstrated by experimental results with the PVM implementation.
机译:提出了平行晶体生长,这是模拟退火(SA)的新并行扩展。子问题-晶体-并行求解,然后迭代合并为更大的晶体。本质上的新颖之处在于,处理器只根据本地计算的合并标准将时间花在特定的子问题上,只要它值得。晶体内搜索,不再重复。合并后仅进行晶间勘探。类似地确定整个问题的终止。 PVM实现的实验结果证明,这导致受控的加速超线性。

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