Solid State Electronics Division, Academy of Sciences, Polytekhnicheskaya 26, St.Petersburg, 194021, Russian Federation;
Solid State Electronics Division, Academy of Sciences, Polytekhnicheskaya 26, St.Petersburg, 194021, Russian Federation;
Solid State Physics Division, Ioffe Institute of the Russian Academy of Sciences, Polytekhnicheskaya 26, St.Petersburg, 194021, Russian Federation;
Solid State Physics Division, Ioffe Institute of the Russian Academy of Sciences, Polytekhnicheskaya 26, St.Petersburg, 194021, Russian Federation;
Solid State Electronics Division, Academy of Sciences, Polytekhnicheskaya 26, St.Petersburg, 194021, Russian Federation;
机译:去极化场和带电掺杂剂对多晶Pb(ZrTi)O_3薄膜极化的影响
机译:基于极化电荷的多晶硅Pb(ZrTi)O_3薄膜的光伏效应
机译:多晶金属/ Pb(ZrTi)O_3 /金属电容器中极化和去极化场的高度保留
机译:多晶铁电Pb(ZrTi)O3膜中电流的偏振依赖性和弛豫
机译:有机铁电表面上的原子极化和局部反应性:用于铁电纳米平版印刷的工程含氟聚合物膜
机译:缩回:将类似外延的Pb(ZrTi)O3薄膜集成到硅中用于下一代铁电场效应晶体管
机译:多晶铁电薄膜中的纳米级极化弛豫:局部环境的作用