Properties of high-density, two-dimensional electron gases at Mott/band insulator interfaces

摘要

Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO_3, and the band insulator SrTiO_3, are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO_3/SrTiO_3 interface. Insights into charge distribution, the influence of the electrostatic boundary conditions, and strong correlation effects will be presented.