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Estimation of van der Waals component of the density of states using the Gaussian disorder model and the correlated disorder model

机译:使用高斯无序模型和相关无序模型估计状态密度的范德华分量

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Abstract: The proportionality of the logarithm of the mobility to the square root of the electric field is most likely caused by the broadening of the density of states according to both the Gaussian disorder model and the 3D correlated disorder model (CDM). Using these models, the relation between the slope of the mobility against the electric field and the dipolar component of the width of the density of states ($sigma$-d$/) is analyzed. The $sigma$-d$/ for the donor and the host polymer are calculated using the dipolar disorder model in which a random distribution of permanent dipoles generates fluctuation in electric potential. A successful interpretation of the relation between $beta and $sigma$-d$/ has been achieved using the formula based on the CDM. Assuming that all components of the density of states are described using Gaussian statistics, the van der Waals component is evaluated to be negligibly small from analyses of temperature dependence of the relation between $beta and $sigma$-d$/. The experimental results also shows that the value of the DOS width that is derived from the analysis of the temperature dependence of the zero-field mobility is different for the value of the DOS width that is derived from the analysis of the electric field dependence. !16
机译:摘要:根据高斯无序模型和3D相关无序模型(CDM),迁移率的对数与电场平方根的比例很可能是由于状态密度变宽引起的。使用这些模型,分析了迁移率相对于电场的斜率与状态密度宽度的偶极分量(sigma $ -d $ /)之间的关系。使用偶极无序模型计算供体和主体聚合物的σ-d/,其中永久性偶极子的随机分布会产生电势波动。使用基于CDM的公式已经成功地解释了$ beta和$ sigma $ -d $ /之间的关系。假设使用高斯统计量描述了状态密度的所有分量,那么从$ beta和$ sigma $ -d $ /之间的关系的温度依赖性分析来看,范德华分量被认为很小。实验结果还表明,从零场迁移率的温度相关性分析得出的DOS宽度值与从电场相关性分析得出的DOS宽度值不同。 !16

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