Group of 442, Institute of Electronic Engineering and Optical Technology, Nanjing University of science and Technology,NanJing 210094 China,Department of Electronic and Electrician Engineering, Nan Yang Institute of Technology, NanYang 473004 China;
Group of 442, Institute of Electronic Engineering and Optical Technology, Nanjing University of science and Technology,NanJing 210094 China;
Group of 442, Institute of Electronic Engineering and Optical Technology, Nanjing University of science and Technology,NanJing 210094 China;
Group of 442, Institute of Electronic Engineering and Optical Technology, Nanjing University of science and Technology,NanJing 210094 China;
Group of 442, Institute of Electronic Engineering and Optical Technology, Nanjing University of science and Technology,NanJing 210094 China;
photocathode; GaAlAs; narrow-band response; quantum efficiency; variable doping;
机译:窄带响应GaAlAs光电阴极的结构设计与实验
机译:均匀掺杂纳米ZnO材料制备中合成方法变量对粒度的影响
机译:使用响应曲面方法(RSM)对芦荟巧克力制品的感官评估进行加工变量的统计优化
机译:可变掺杂窄带响应Gaalas PhotoCathode研究的制备方法
机译:多碱光电阴极的制备与研究。
机译:含镍的二氧化铈氧化锆掺杂有Ti和Nb。支撑组合物对甲烷干重塑催化活性的影响
机译:基于光电阴极射频枪的紧凑型窄带太赫兹辐射源