Analysis of microlithography in an open-architecture TCAD system

摘要

Abstract: The paper offers the results of investigations of forming the submicron topological structures of the `contact window'-type by using only all-dry vacuum and plasmas technologies. Analysis is made of the relationship between lithographic and electric parameters of contact systems with micron-size features. A technological process of manufacturing a three-layer structure `metal-dielectric-metal' by using the LVPL is developed to study electric characteristic of systems with micron and submicron contact windows. Analysis is made of the 0.5 - 1.0 $mu@m to 0.5 - 0.3 $mu@m. To form masks, use was made of vacuum resist 0.4 to 0.7 $mu@m films deposited onto 0.29 $mu@m thick silicon oxide layers on a silicon substrate. The resist was subjected to exposure with simultaneous development on a LVPL apparatus. An average of laser radiation power, a pulse repetition rate, a degree of vacuum were maintained constant, while a dose was varied by changing the exposure at E $EQ 1 J/cm$+2$/. Next plasmochemical etching of Al or silicon oxide was performed through a vacuum resist-mask. !7