Sample-3D benchmarks including high-NA and thin-film effects

摘要

Abstract: A method of imaging thin films under high NA conditions is described and implemented. This method is based on the Hopkins' theory. This technique is benchmarked on two examples. Run times and profiles are reported. This method is used to calculate the etch rate of the photoresist and is used as an input to a development simulator for one of the benchmarks. Three methods of simulating photolithographic development are cell removal, ray-trace, and advection. Each solves for the advancing surface as the motion of a contour of an imaginary function under the Hamilton-Jacobi equation. Each method has advantages and limitations in reaching the goal of a fast, accurate and easy to maintain photolithography simulator. A discussion of the algorithms necessary for a ray-trace simulator are also included. Aspects of proper mesh maintenance and implementing correct boundary condition solutions are demonstrated, with the Hamilton-Jacobi formulation used as justification. A new deloop algorithm specially designed for ray-trace advancement is presented. A new triangulation technique, specially designed for surface advancement simulators is outlined. !14