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Optimum numerical aperture for optical projection microlithography

机译:光学投影微光刻的最佳数值孔径

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Abstract: Given a resolution requirement and the imaging wavelength, there is an optimum NA. If the NA is too low, the resolution cannot be achieved, but if the NA is too high, the depth of focus, which is inversely proportional to NA$+2$/, becomes unacceptable. There is an optimum NA where the depth of focus is maximum. In this paper the optimum NA given by the aerial image is determined unambiguously by evaluating the normalized depth of focus k$- 2$/ as a function of the normalized resolution k$-1$/, then identifying the k$-1$/ at which the function k$-2$//k$-1$/$+2$/ is maximum. The optimum NA is then simply the optimum k$- 1$/ multiplied by $lambda@/NA. A substantial amount of work is required to evaluate k$-2$/ as a function of k$-1$/ by means of exposure-defocus trees and windows. In this paper, all k$- 2$/ and k$-2$//k$-1$/$+2$/ as functions of k$-1$/ are given for line-space pairs, isolated line openings, isolated spaces, holes, islands, combination of the 3 long features, and of all the 5 features. A 10% exposure budget is used to simulate the situation of single layer resist systems and 30% exposure budget for multilayer resist systems. The results show optimum NA for individual feature shapes much lower than expectation, gaining insights to the problems occurring in manufacturing and in reducing the usable k$-1$/. They also lead to the following observations. The optimum k$-1$/ for single resist systems ranges from 0.57 to 0.87 depending on the feature shape. That for multilayer resist systems ranges from 0.42 to 0.7. Opaque spaces have the lowest optimum k$-1$/. Line openings have the largest depth of focus. Positive resists and negative masks are preferred to delineate contact holes. Negative resists and negative masks are preferred to delineate gates and metal lines. The opaque island is the limiting feature for the line-space pair, line, space, hole, and island combination at larger k$-1$/. That for the combination of line-space pair, line, and space is the line-space pair.!
机译:摘要:在给定分辨率要求和成像波长的情况下,存在一个最佳的NA。如果NA太低,则无法实现分辨率,但是如果NA太高,则与NA $ + 2 $ /成反比的焦点深度将变得不可接受。焦点深度最大时,存在一个最佳的NA。在本文中,通过评估归一化焦深k $ -2 $ /作为归一化分辨率k $ -1 $ /的函数,然后确定k $ -1 $ /,可以明确确定航空影像给出的最佳NA。函数k $ -2 $ // k $ -1 $ / $ + 2 $ /最大。然后,最优NA就是最优k $ -1 $ /乘以$ lambda @ / NA。通过曝光散焦树和窗户,需要大量工作来评估k $ -2 $ /作为k $ -1 $ /的函数。在本文中,所有k $-2 $ /和k $ -2 $ // k $ -1 $ / $ + 2 $ /作为k $ -1 $ /的函数都针对行空间对,孤立的行开口给出,孤立的空间,孔,岛,3个长特征以及所有5个特征的组合。 10%的曝光预算用于模拟单层抗蚀剂系统的情况,而30%的曝光预算用于模拟多层抗蚀剂系统。结果表明,单个特征形状的最佳NA远低于预期值,从而洞悉了制造中出现的问题并降低了可用k $ -1 $ /。它们还导致以下观察。根据特征形状的不同,单抗蚀剂系统的最佳k $ -1 $ /范围为0.57至0.87。对于多层抗蚀剂系统,其范围为0.42至0.7。不透明空间的最佳k $ -1 $ /最低。线孔的焦点深度最大。优选使用正性抗蚀剂和负性掩模来描绘接触孔。优选使用负性抗蚀剂和负性掩模来描绘栅极和金属线。对于较大的k $ -1 $ /,线对空间,线,空间,孔和岛组合是不透明岛的限制特征。行空间对,行和空间的组合就是行空间对。

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