Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford, GU2 7XH, United Kingdom;
Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford, GU2 7XH, United Kingdom;
Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford, GU2 7XH, United Kingdom;
Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford, GU2 7XH, United Kingdom;
Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford, GU2 7XH, United Kingdom;
Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford, GU2 7XH, United Kingdom;
Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom;
Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom;
Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, United Kingdom;
Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, United Kingdom;
Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371;
Advanced Technology Institute, Department of Electronic Engineering, University of Surrey, Guildford, GU2 7XH, United Kingdom;
机译:非晶/晶体硅异质结中的能带阵容以及氢微结构和拓扑结构的影响
机译:n型a-SiGe:H / p型晶体硅异质结的电学表征
机译:MoS_2薄膜生长过程中的微观结构演变及其对MoS_2 / p-Si异质结太阳能电池中MoS_2光电性能的影响
机译:非晶结晶硅杂硅杂膜的界面处理在形成无定形 - 纳米晶体过渡阶段
机译:化学气相沉积和等离子体加氢制备非晶硅的光电性能。
机译:注入碳离子的Cz和FZ硅晶体中氧配合物的结构和电学性质
机译:离子注入改性非晶态硫族化物/硅异质结的电学特性
机译:离子注入改性碳化硅晶体和纤维的近表面化学,物理和力学性能研究。